
Manufacturer Part #
NDT3055L
N-Channel 60 V 0.1Ω SMT Enhancement Mode Field Effect Transistor SOT-223
Product Specification Section
onsemi NDT3055L - Product Specification
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ECCN:
EAR99
PCN Information:
N/A
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Date
Part Status:
Active
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onsemi NDT3055L - Technical Attributes
Attributes Table
Fet Type: | N-Ch |
Drain-to-Source Voltage [Vdss]: | 60V |
Drain-Source On Resistance-Max: | 0.1Ω |
Rated Power Dissipation: | 1.1|W |
Qg Gate Charge: | 20nC |
Package Style: | SOT-223 (TO-261-4, SC-73) |
Mounting Method: | Surface Mount |
Features & Applications
The NDT3055L Part Number is a Logic level N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.
These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.
Features:
- 4 A, 60 V
- RDS(ON) = 0.100 Ω @ VGS = 10 V
- RDS(ON) = 0.120 Ω @ VGS = 4.5 V
- High density cell design for extremely lowRDS(ON)
- High power and current handling capability in a widely used surface mount package
Applications:
- Automation
- Broadband Access
- Broadband Modem
- Broadcast & Studio
- Building & Home Control
- Camcorder
Pricing Section
Global Stock:
60,000
USA:
60,000
On Order:
0
Factory Lead Time:
9 Weeks
Quantity
Unit Price
4,000
$0.335
8,000+
$0.33
Product Variant Information section
Available Packaging
Package Qty:
4000 per Reel
Package Style:
SOT-223 (TO-261-4, SC-73)
Mounting Method:
Surface Mount