Manufacturer Part #
BFU760F,115
BFU760 Series 2.8 V 25.5 dB Gain NPN Silicon Germanium RF Transistor-SOT-343F-4
| | |||||||||||
| | |||||||||||
| Mfr. Name: | NXP | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:3000 per Reel Package Style:SOT-343F-4 Mounting Method:Surface Mount | ||||||||||
| Date Code: | |||||||||||
Product Specification Section
NXP BFU760F,115 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
NXP BFU760F,115 - Technical Attributes
Attributes Table
| Polarity: | NPN |
| Type: | RF |
| CE Voltage-Max: | 2.8V |
| Collector Current Max: | 70mA |
| Power Dissipation-Tot: | 220mW |
| Collector - Base Voltage: | 10V |
| Emitter - Base Voltage: | 1V |
| DC Current Gain-Min: | 155 |
| Collector - Current Cutoff: | 100nA |
| Configuration: | Single |
| Frequency - Transition: | 45GHz |
| Noise Figure: | 0.75dB |
| Moisture Sensitivity Level: | 1 |
| Package Style: | SOT-343F-4 |
| Mounting Method: | Surface Mount |
Features & Applications
The BFU760F Series is a NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
Features:
- Low noise high linearity RF transistor
- High maximum output third-order intercept point 32 dBm at 1.8 GHz
- 110 GHz fT silicon germanium technology
Applications:
- Ka band oscillators DRO’s
- High linearity applications
- Medium output power applications
- Wi-Fi / WLAN / WiMAX
- GPS
- ZigBee
- SDARS first stage LNA
- LTE, cellular, UMTS
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
N/A
Quantity
Unit Price
3,000
$0.152
6,000
$0.15
9,000
$0.149
12,000
$0.148
15,000+
$0.146
Product Variant Information section
Available Packaging
Package Qty:
3000 per Reel
Package Style:
SOT-343F-4
Mounting Method:
Surface Mount