
Manufacturer Part #
IPT020N10N5ATMA1
N-Channel 100 V 260 A 273 W SMT OptiMOSTM5 Power Transistor - PG-HSOF-8
Product Specification Section
Infineon IPT020N10N5ATMA1 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
File
Date
Assembly Site/Material Change
01/13/2023 Details and Download
Part Status:
Active
Active
Infineon IPT020N10N5ATMA1 - Technical Attributes
Attributes Table
Product Status: | Active |
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 100V |
Drain-Source On Resistance-Max: | 2mΩ |
Rated Power Dissipation: | 273W |
Qg Gate Charge: | 122nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 31A |
Turn-on Delay Time: | 20ns |
Turn-off Delay Time: | 49ns |
Rise Time: | 13ns |
Fall Time: | 17ns |
Operating Temp Range: | -55°C to +175°C |
Gate Source Threshold: | 3V |
Technology: | OptiMOS |
Input Capacitance: | 8700pF |
Series: | OptiMOS 5 |
Mounting Method: | Surface Mount |
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
18 Weeks
Quantity
Unit Price
2,000+
$1.77
Product Variant Information section
Available Packaging
Package Qty:
2000 per Reel
Mounting Method:
Surface Mount