
Manufacturer Part #
IRFP9140NPBF
Single P-Channel 100 V 0.117 Ohm 97 nC HEXFET® Power Mosfet - TO-247AC
Infineon IRFP9140NPBF - Product Specification
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Detailed change information:Subject Change of the wafer production location from Infineon Technologies Temecula, USA and EPISIL Technologies Inc., Taiwan to Infineon Technologies Kulim, Malaysia for dedicated G5 P-Channel MOSFET products.Reason :The wafer production of the affected products will be transferred to Infineon Technologies Kulim, according to global Infineon production strategy.
Detailed change information:Subject Phase out of Kyocera KEG300 mold compound for several assembly locations and change of lead finish from tin dip to electroplating at Tijuana, Mexico for dedicated TO220-3 & TO247-3 products.Reason:To ensure continuity of mold compound supply due to Kyocera KEG300 end of life and to further ensure our product performance with lead-free electroplating finish
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Infineon IRFP9140NPBF - Technical Attributes
Fet Type: | P-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 100V |
Drain-Source On Resistance-Max: | 0.117Ω |
Rated Power Dissipation: | 140W |
Qg Gate Charge: | 97nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 23A |
Turn-on Delay Time: | 15ns |
Turn-off Delay Time: | 51ns |
Rise Time: | 67ns |
Fall Time: | 51ns |
Operating Temp Range: | -55°C to +175°C |
Gate Source Threshold: | 4V |
Technology: | Advanced Process Technology |
Height - Max: | 20.7mm |
Length: | 15.87mm |
Input Capacitance: | 1300pF |
Package Style: | TO-247AC |
Mounting Method: | Flange Mount |
Available Packaging
Package Qty:
25 per Tube
Package Style:
TO-247AC
Mounting Method:
Flange Mount