Industry-leading 200 °C rating for more efficient and simplified designs
Based on the advanced and innovative properties of wide bandgap materials, ST’s silicon carbide (SiC) MOSFET feature very low R DS(on) per area for the 1200 V rating combined with excellent switching performance, translating into more efficient and compact designs. ST is among the first companies to produce high-voltage SiC MOSFET. This new family features the industry’s highest temperature rating of 200 °C for improved thermal design of power electronics systems. Compared to silicon MOSFET, SiC MOSFET also feature significantly reduced switching losses with minimal variation versus the temperature.
Key Features & Benefits
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SiC MOSFET Versus Silicon IGBT
Table 1 compares the 1200 V, 80 mΩ SCT30N120 SiC MOSFET with a trench field-stop IGBT of the same voltage rating and equivalent RON. You can see that the SiC MOSFET exhibits significantly reduced switching losses, even at high temperatures. This enables designers to operate at very high switching frequencies, reducing the size of passive components for smaller form factors. In addition, the variation of EON and E OFF with temperature is very small. For example, the E OFF of the SiC MOSFET increases only by 25% as the temperature rises from 25 °C to 175 °C, while the EOFF of the IGBT increases by 90%. Also the on-state resistance variation versus temperature is very tight, as shown in Figure 1.
Table 1. Switching Loss Comparison
Figure 1. On-Resistance Variation Versus Temperature
When tested on a CCM 5 kW boost converter application board at a switching frequency of 100 kHz, ST’s SiC MOSFET solution provides the highest efficiency, as can be seen in the figure below:
