onsemi 650V M3S EliteSiC MOSFETs
Featuring high efficiency and lower system costs
onsemi has expanded its Silicon Carbide (SiC) portfolio with a new family of 650V M3S EliteSiC MOSFETs, delivering exceptional fast-switching performance and high efficiency for Power Factor Correction (PFC) circuits and boost converters.
These advanced MOSFETs leverage EliteSiC technology to achieve significantly better operating characteristics compared to silicon-based alternatives. Key features such as zero reverse-recovery charge, low forward voltage, temperature-independent current stability, high surge capacity, and a positive temperature coefficient ensure superior switching performance with reduced power losses and enable seamless device paralleling.
The efficiency gains of the 650V SiC MOSFETs stem from their low forward voltage and zero reverse-recovery charge, optimizing converter circuit performance. Additionally, faster reverse recovery facilitates higher switching speeds, reducing the size of magnetics and passive components. This enables compact, high-density designs with lower total system costs.
A unique, patented termination structure enhances the reliability, stability, and ruggedness of onsemi's EliteSiC MOSFETs. They also offer industry-leading unclamped inductive switching capability and minimal leakage currents.
Available in D2PAK7 and TOLL packages for better thermal reliability, plus standard TO-247-4 and TO-247-3LD offerings, providing versatile options for diverse design requirements.
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Featured Product Family: M3S EliteSiC MOSFETs, 650 V
M3S EliteSiC technology surpasses its predecessor with a 50% lower gate charge, 44% lower EOSS, and 44% less stored charge in its output capacitance (QOSS). This superior EOSS figure improves system efficiency at light loads when used in a hard switching topology in the PFC stage.
Additionally, lower QOSS simplifies resonant tank inductance design for soft-switching topologies in the LLC stage.
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