ON Semiconductor NCD57252 Isolated Dual-Channel IGBT/MOSFET Gate Drivers
NCD(V)57252/3/5/6 are high-current dual-channel isolated IGBT/MOSFET gate drivers with 2.5 or 5 kVrms internal galvanic isolation from input to each output and functional isolation between the two output channels. The device accepts 3.3 V to 20 V bias voltage and signal levels on the input side and up to 32 V bias voltage on the output side. The device accepts complementary inputs and offers separate pins for Disable and Dead Time control for system design convenience. Drivers are available in wide-body SOIC-16 and narrow-body SOIC-16 packages.
Features - High peak output current (±6.5 A, ±3.5 A)
- Configurable as a dual low-side or dual high-side or half-bridge driver
- Tight UVLO thresholds on all power supplies
- 3.3 V, 5 V, and 15 V Logic Input
- 2.5 or 5 kVrms galvanic isolation from input to each output and 1.5 kVrms differential voltage between output channels
- Short propagation delays with accurate matching
- Programmable overlap or dead time control programmable overlap or dead time control
- Disable pin to turn off outputs for power sequencing
- ANB function to offer flexibility to set up the driver as half-bridge driver operating with a single input signal
- IGBT/MOSFET gate clamping during short circuit
| Benefits - Enables removal of buffer
- Design flexibility
- Consistent performance
- Design flexibility
- Meets safety requirements
- Faster switching capability
Applications - Automotive applications
- Industrial applications
- EV chargers
- Uninterruptible power supplies (UPS)
- Industrial power supplies
- Solar inverters
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