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Référence fabricant

CAT24M01WI-GT3

CAT24M01 Series 1024 kb (128k x 8) 1.7 - 5.5 V I2C CMOS Serial EEPROM - SOIC-8

Modèle ECAD:
Nom du fabricant: onsemi
Emballage standard:
Product Variant Information section
Code de date: 2428
Product Specification Section
onsemi CAT24M01WI-GT3 - Caractéristiques techniques
Attributes Table
Memory Density: 1Mb
Memory Organization: 128 K x 8
Supply Voltage-Nom: 1.8V to 5.5V
Clock Frequency-Max: 1MHz
Write Cycle Time-Max (tWC): 5ms
Style d'emballage :  SOIC-8
Méthode de montage : Surface Mount
Fonctionnalités et applications

The CAT24M01WI-GT3 is a part of CAT24 series I2C CMOS serial EEPROM. It has a storage temperature ranging from -65°C to +150°C and its available in SOIC-8 package.

The CAT24M01 is a 1024 kb Serial CMOS EEPROM, internally organized as 131,072 words of 8 bits each. It features a 256-byte page write buffer and supports the Standard (100 kHz), Fast (400 kHz) and Fast-Plus (1 MHz) I2C protocol. Write operations can be inhibited by taking the WP pin High (this protects the entire memory). External address pins make it possible to address up to four CAT24M01 devices on the same bus.

Features:

  • Supports Standard, Fast and Fast−Plus I2C Protocol
  • 1.8 V to 5.5 V Supply Voltage Range
  • 256−Byte Page Write Buffer
  • Hardware Write Protection for Entire Memory
  • Schmitt Triggers and Noise Suppression Filters on I2C Bus Inputs (SCL and SDA)
  • Low Power CMOS Technology
  • 1,000,000 Program/Erase Cycles
  • 100 Year Data Retention
  • Industrial and Extended Temperature Range
  • 8−pin PDIP, SOIC, TSSOP and 8−pad UDFN Packages
  • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

 

 

Pricing Section
Stock global :
51 000
États-Unis:
3 000
d’Allemagne (En ligne seulement):
48 000
Sur commande :Order inventroy details
39 000
Stock d'usine :Stock d'usine :
0
Délai d'usine :
22 Semaines
Commande minimale :
3000
Multiples de :
3000
Total 
1 425,00 $
USD
Quantité
Prix unitaire
3 000
$0.475
6 000
$0.47
9 000
$0.465
15 000+
$0.455
Product Variant Information section