Référence fabricant
IRFB4227PBF
Single N-Channel 200 V 24 mOhm 98 nC HEXFET® Power Mosfet - TO-220-3
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| Nom du fabricant: | Infineon | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :50 par Tube Style d'emballage :TO-220-3 (TO-220AB) Méthode de montage :Through Hole | ||||||||||
| Code de date: | |||||||||||
Infineon IRFB4227PBF - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Subject Capacity extension for dedicated Gen10.7 products by introduction of additional wafer manufacturing site at SamsungElectronics Co. Ltd., Korea and Infineon Technologies Dresden, GermanyReason Extension of wafer manufacturing sites for additional capacity to ensure continuity of supply and flexible manufacturingDescription Old - Wafer Production Location- Newport Wafer Fab Ltd.(NWF Ltd.), United Kingdom- Vanguard International Semiconductor Corporation, Taiwan- Tower Semiconductor Ltd., Israel- Infineon TechnologiesDresden GmbH, Dresden, GermanyNew - Wafer Production Location- Existing Wafer ProductionLocations see �old�- Samsung Electronics Co, Ltd., Korea- Infineon TechnologiesDresden GmbH, GermanyImpact of changeNO change on electrical, thermal parameters and reliability as proven via product qualification and characterizationNO change in existing datasheet parametersNO change in quality and reliability. Processes are optimized to meet product performance according to already applied Infineon specificationTime scheduleIntended start of delivery 2022-04-01 (or earlier based on customer approval)
Statut du produit:
Infineon IRFB4227PBF - Caractéristiques techniques
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 200V |
| Drain-Source On Resistance-Max: | 24mΩ |
| Rated Power Dissipation: | 330W |
| Qg Gate Charge: | 70nC |
| Gate-Source Voltage-Max [Vgss]: | 30V |
| Drain Current: | 65A |
| Turn-on Delay Time: | 33ns |
| Turn-off Delay Time: | 21ns |
| Rise Time: | 20ns |
| Fall Time: | 31ns |
| Operating Temp Range: | -40°C to +175°C |
| Gate Source Threshold: | 5V |
| Technology: | Advanced Process Technology |
| Input Capacitance: | 4600pF |
| Style d'emballage : | TO-220-3 (TO-220AB) |
| Méthode de montage : | Through Hole |
Emballages disponibles
Qté d'emballage(s) :
50 par Tube
Style d'emballage :
TO-220-3 (TO-220AB)
Méthode de montage :
Through Hole