Infineon — Silicon Carbide MOSFET Discretes

Silicon carbide (SiC) CoolSiC™ MOSFET discretes ideally suited for hard- and resonant-switching topologies

CoolSiC™ SiC MOSFETs in discrete packages build on a state-of-the-art trench semiconductor process optimized to allow for both lowest losses in the application and highest reliability in operation. The temperature independent low switching losses and a fast, internal free-wheeling diode rated for hard commutation make the CoolSiC™ MOSFETs in discrete packages ideal for both hard- and resonant-switching topologies like power factor correction (PFC) circuits, bi-directional topologies and DC-DC converters or DC-AC inverters. An excellent immunity against unwanted parasitic turn-on effects enables a benchmark low dynamic loss even at zero volt turn-off voltage in bridge topologies.

We complete our discrete offering with a range of selected driver IC products fulfilling the needs by the ultrafast SiC MOSFET switching feature. Together, CoolSiC™ MOSFETs and EiceDRIVER™ gate driver ICs leverage the advantage of the technology: improved efficiency, space and weight savings, part count reduction, enhanced system reliability.

CoolSiC™ MOSFETs in discrete housings come along with a fast internal freewheeling diode, thus making hard switching without additional diode chips possible. Due to its unipolar character, the MOSFETs show very low, temperature-independent switching and low conduction losses, especially under partial load conditions.

Our unique silicon carbide (SiC) CoolSiC™ MOSFET discrete products in 1200 V and 650 V are ideally suited for hard- and resonant-switching topologies such as LLC and ZVS, and can be driven like an IGBT or CoolMOS™, using standard drivers. These robust devices offer superior gate oxide reliability enabled by state-of-the-art trench design, best-in-class switching and conduction losses, highest transconductance level (gain), threshold voltage of V_th = 4 V and short-circuit robustness.