
Référence fabricant
S29GL512T10FHI010
Parallel Nor Flash 2.7v-3.6v 512mb 64Ball,13x11
Infineon S29GL512T10FHI010 - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Detailed change information:Change of lot naming convention in Infineon Technologies (Thailand) Limited, Nonthaburi, Thailand for subject memory productsReason:The lot numbering identification changing from 10 digit to 11 digit for whole Bangkok site according to the global Infineon standardlot numbering system manufacturing strategy.
Detailed change information:Change of lot naming convention in Infineon Technologies (Thailand) Limited, Nonthaburi, Thailand for subject memory productsReason:The lot numbering identification changing from 10 digit to 11 digit for whole Bangkok site according to the global Infineon standardlot numbering system manufacturing strategy.
Detailed change information:Change of lot naming convention in Infineon Technologies (Thailand) Limited, Nonthaburi, Thailand for subject memory productsReason:The lot numbering identification changing from 10 digit to 11 digit for whole Bangkok site according to the global Infineon standardlot numbering system manufacturing strategy.
Statut du produit:
Infineon S29GL512T10FHI010 - Caractéristiques techniques
Memory Density: | 512Mb |
Memory Organization: | 64M x 8 |
Supply Voltage-Nom: | 2.7V to 3.6V |
Access Time-Max: | 100ns |
Temperature Grade: | Industrial |
Number of Words: | 64M |
Word Length: | 8b |
Interface: | Parallel |
Operating Temp Range: | -40°C to +85°C |
Storage Temperature Range: | -65°C to +150°C |
Moisture Sensitivity Level: | 3 |
Style d'emballage : | FBGA-64 |
Méthode de montage : | Surface Mount |
Emballages disponibles
Qté d'emballage(s) :
180 par Tray
Style d'emballage :
FBGA-64
Méthode de montage :
Surface Mount