IRF9Z34NPBF in Tube by Infineon | Mosfets | Future Electronics
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Manufacturer Part #

IRF9Z34NPBF

Single P-Channel 55 V 0.1 Ohm 35 nC HEXFET® Power Mosfet - TO-220-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2409
Product Specification Section
Infineon IRF9Z34NPBF - Technical Attributes
Attributes Table
Fet Type: P-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: -55V
Drain-Source On Resistance-Max: 0.1Ω
Rated Power Dissipation: 68W
Qg Gate Charge: 35nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: -19A
Turn-on Delay Time: 13ns
Turn-off Delay Time: 30ns
Rise Time: 55ns
Fall Time: 41ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: -4V
Technology: Si
Height - Max: 8.77mm
Length: 10.54mm
Input Capacitance: 620pF
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Features & Applications

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Features

Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
P-Channel
Fully Avalanche Rated
Lead-Free

The IRF9Z34NPBF is a Single P-Channel MOSFET. It comes in a TO-220AB package and is shipped in tubes.

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Pricing Section
Global Stock:
0
USA:
0
167,700
Factory Stock:Factory Stock:
0
Factory Lead Time:
18 Weeks
Minimum Order:
2000
Multiple Of:
50
Total
$520.00
USD
Quantity
Unit Price
50
$0.275
250
$0.27
1,250
$0.26
2,500
$0.255
7,500+
$0.245
Product Variant Information section