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NXP | AFT09MS007NT1

Manufacturer Part #

AFT09MS007NT1

AFT09MSx Series 30 V 870 MHz N-Channel RF Power LDMOS Transistor - PLD-1.5W-2

ECAD Model:
Mfr. Name: NXP
Standard Pkg:
Product Variant Information section
Date Code: 2436
Product Specification Section
NXP AFT09MS007NT1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 30V
Rated Power Dissipation: 114W
Gate-Source Voltage-Max [Vgss]: 12V
Operating Temp Range: -40°C to +150°C
Gate Source Threshold: 2.1V
Input Capacitance: 107pF
Mounting Method: Surface Mount
Pricing Section
Global Stock:
1,000
Germany (Online Only):
1,000
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
12 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$2,010.00
USD
Quantity
Unit Price
1,000+
$2.01
Product Variant Information section