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Manufacturer Part #

BM3G015MUV-LBE2

BM3G0 Series 650 V 150 mOhm 2 MHz SMT GaN HEMT Power Stage - VQFN-46

ECAD Model:
Mfr. Name: ROHM
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
ROHM BM3G015MUV-LBE2 - Technical Attributes
Attributes Table
Technology: GaN
Fet Type: N-Ch
Drain Current: 14.7A
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 650V
Operating Temp Range: -40°C to +105°C
Package Style:  VQFN-46
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
17 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$3,760.00
USD
Quantity
Unit Price
1,000+
$3.76
Product Variant Information section