Référence fabricant
SI2303CDS-T1-BE3
-30V,2.7A,190MOHM,SOT-23 - COO: TAIWAN
Vishay SI2303CDS-T1-BE3 - Spécifications du produit
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Description of Change: To meet increasing demand for commercial Power MOSFET products, Vishay Siliconix announces the qualification of wafer back-grind and back-metallization (BGBM) on select commercial Power MOSFET in SOT-23 and TSOP6 packages at Prosperity Power Technology Inc. (ProPowertek, previously IST).ProPowertek, founded at the Hsinchu Science Park in Nov�20, aims to provide customers with engineering services for the center- and backend wafer making process, and is devoted to leading the world in this market. ProPowertek is focusing on wafer thinning engineering, front side metal (FSM), backside grinding backside metal (BGBM), and IGBT back-end Turnkey solution in the local IC industry chain. ProPowertek has achieved ISO9001, ISO14001, ISO45001, and IATF16949 certifications for quality management systems. Classification of Change: Manufacturing Capacity ExpansionExpected Influence on Quality/Reliability/Performance: There will be no effect on quality, reliability, performance, and the minimum/maximum values in the datasheet.Vishay Brand(S): Vishay SiliconixTime Schedule:Start Shipment Date: Mon May 22, 2023
Statut du produit:
Vishay SI2303CDS-T1-BE3 - Caractéristiques techniques
Fet Type: | P-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 30V |
Drain-Source On Resistance-Max: | 0.19Ω |
Qg Gate Charge: | 4nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 1.9A |
Turn-on Delay Time: | 4ns |
Turn-off Delay Time: | 11ns |
Rise Time: | 11ns |
Fall Time: | 8ns |
Operating Temp Range: | -55°C |
Gate Source Threshold: | 3V |
Input Capacitance: | 155pF |
Style d'emballage : | SOT-23 (SC-59,TO-236) |
Méthode de montage : | Surface Mount |
Emballages disponibles
Qté d'emballage(s) :
3000 par Reel
Style d'emballage :
SOT-23 (SC-59,TO-236)
Méthode de montage :
Surface Mount