Manufacturer Part #
IMW120R045M1XKSA1
IMW120 Series 1200V 59mOhm 52 nC N-Channel SiC CoolSiC™ Trench MOSFET - TO-247-3
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:30 per Package Style:TO-247-3 Mounting Method:Through Hole | ||||||||||
| Date Code: | 2343 | ||||||||||
Product Specification Section
Infineon IMW120R045M1XKSA1 - Product Specification
Shipping Information:
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ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
Infineon IMW120R045M1XKSA1 - Technical Attributes
Attributes Table
| Technology: | SiCFET (Silicon Carbide) |
| Product Status: | Active |
| Fet Type: | N-Ch |
| No. of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 1200V |
| Drain Current: | 52A |
| Input Capacitance: | 1900pF |
| Power Dissipation: | 228W |
| Operating Temp Range: | -55°C to +175°C |
| Package Style: | TO-247-3 |
| Mounting Method: | Through Hole |
Features & Applications
Infineon Technologies has announced that it has begun volume production of discrete 1,200V CoolSiC™ MOSFET devices in a TO247 package, with on-resistance ratings ranging from 30mΩ to 350mΩ.
APPLICATIONS
• Solar inverters
• Battery charging infrastructure
• Energy storage solutions
• Uninterruptible power supplies
• Motor drives
• Data center and telecoms power supplies
FEATURES
• Low device capacitance
• Temperature-independent switching losses
• Integral diode with low reverse-recovery charge
• Threshold-free on-state characteristics
Pricing Section
Global Stock:
215
USA:
215
On Order:
0
Factory Lead Time:
12 Weeks
Quantity
Unit Price
1
$7.61
5
$7.52
25
$7.43
100
$7.36
250+
$7.25
Product Variant Information section
Available Packaging
Package Qty:
30 per
Package Style:
TO-247-3
Mounting Method:
Through Hole