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Manufacturer Part #

HAT2165H-EL-E

ECAD Model:
Mfr. Name: Renesas
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Renesas HAT2165H-EL-E - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 5.3mΩ
Rated Power Dissipation: 30|W
Qg Gate Charge: 33nC
Mounting Method: Surface Mount
Features & Applications

The HAT2165H-EL-E is part of HAT2165H series silicon N channel power MOSFET power switching. It is having storage temperature range of -55 to +150° C .

Features:

  • High speed switching
  • Capable of 7 V gate drive
  • Low drive current
  • High density mounting
  • Low on-resistance
  • RDS(on)=2.5 mΩ typ. (at VGS=10 V)
Pricing Section
Global Stock:
0
Germany (Online Only):
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
2500
Multiple Of:
2500
Total
$4,775.00
USD
Quantity
Web Price
2,500+
$1.91
Product Variant Information section