Manufacturer Part #
HAT2165H-EL-E
Product Specification Section
Renesas HAT2165H-EL-E - Product Specification
Shipping Information:
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Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
Renesas HAT2165H-EL-E - Technical Attributes
Attributes Table
Fet Type: | N-Ch |
Drain-to-Source Voltage [Vdss]: | 30V |
Drain-Source On Resistance-Max: | 5.3mΩ |
Rated Power Dissipation: | 30|W |
Qg Gate Charge: | 33nC |
Mounting Method: | Surface Mount |
Features & Applications
The HAT2165H-EL-E is part of HAT2165H series silicon N channel power MOSFET power switching. It is having storage temperature range of -55 to +150° C .
Features:
- High speed switching
- Capable of 7 V gate drive
- Low drive current
- High density mounting
- Low on-resistance
- RDS(on)=2.5 mΩ typ. (at VGS=10 V)
Pricing Section
Global Stock:
0
Germany (Online Only):
0
On Order:
0
Factory Lead Time:
N/A
Quantity
Web Price
2,500+
$1.91
Product Variant Information section
Available Packaging
Package Qty:
2500 per Reel
Mounting Method:
Surface Mount