FF6MR12W2M1HB11BPSA1 in Tray by Infineon | Silicon Carbide Power Modules (SiC Power Modules) | Future Electronics
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Manufacturer Part #

FF6MR12W2M1HB11BPSA1

1200 V 145 A Dual N-Channel Chassis Mount CoolSiC Trench MOSFET Module

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon FF6MR12W2M1HB11BPSA1 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Gate-Source Voltage-Max [Vgss]: 23V
Isolation Voltage-RMS: 3000V
Drain-to-Source Voltage [Vdss]: 1200V
Drain Current: 145A
Configuration: Half Bridge
Operating Temp Range: -40°C to +175°C
Package Style:  Module
Mounting Method: Chassis Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
12 Weeks
Minimum Order:
15
Multiple Of:
15
Total
$2,159.25
USD
Quantity
Unit Price
1
$149.20
3
$147.05
5
$146.06
15
$143.95
25+
$142.10
Product Variant Information section