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Manufacturer Part #

IPT012N08NF2SATMA1

N-Channel 80 V 39 A 3.8 W Surface Mount Mosfet - PG-HSOF-8-10

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2443
Product Specification Section
Infineon IPT012N08NF2SATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 80V
Drain-Source On Resistance-Max: 1.23mΩ
Rated Power Dissipation: 300W
Qg Gate Charge: 255nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 351A
Turn-on Delay Time: 25ns
Turn-off Delay Time: 72ns
Rise Time: 72ns
Fall Time: 44ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 3V
Technology: Si
Input Capacitance: 12000pF
Series: StrongIRFET™ 2
Package Style:  HSOF-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
50
USA:
50
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
12 Weeks
Minimum Order:
1
Multiple Of:
1
Total
$1.48
USD
Quantity
Unit Price
1
$1.48
15
$1.43
50
$1.41
250
$1.38
1,000+
$1.34
Product Variant Information section