FDMS86101 in Reel by onsemi | Mosfets | Future Electronics
text.skipToContent text.skipToNavigation

Manufacturer Part #

FDMS86101

FDMS86101 Series 100 V 60 A 8 mOhm N-Channel PowerTrench® MOSFET - POWER-56

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2417
Product Specification Section
onsemi FDMS86101 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 8mΩ
Rated Power Dissipation: 2.5|W
Qg Gate Charge: 55nC
Mounting Method: Surface Mount
Features & Applications

The FDMS86101 is a 100 V 8 mΩ N-Channel PowerTrench® Mosfet is produced using advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance

Features:

  • Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A
  • Max rDS(on) = 13.5 mΩ at VGS = 6 V, ID = 9.5 A
  • Advanced Package and Silicon combination for low rDS(on) and high efficiency
  • MSL1 robust package design
  • 100% UIL tested
  • RoHS compliant 

Applications:

  • Automation
  • Building & Home Control
  • Consumer Appliances
  • Medical Electronics/Devices
  • Military & Civil Aerospace
  • Mobile Comm Infrastructure
  • DC-DC Conversion
Read More...
Pricing Section
Global Stock:
9,000
USA:
9,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
17 Weeks
Minimum Order:
3000
Multiple Of:
3000
tariff icon
Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$3,150.00
USD
Quantity
Unit Price
3,000+
$1.05