Manufacturer Part #
NXH008T120M3F2PTHG
4 N-Channel 1200 V 129 A 371 W 11.5 mOhm Silicon Carbide MOSFET Module - PIM-29
Product Specification Section
onsemi NXH008T120M3F2PTHG - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
onsemi NXH008T120M3F2PTHG - Technical Attributes
Attributes Table
Type: | Power Module |
Technology: | SiC (Silicon Carbide) Schottky |
Gate-Source Voltage-Max [Vgss]: | 1200V |
Drain Current: | 128A |
Operating Temp Range: | -40°C to +150°C |
Package Style: | Module |
Mounting Method: | Chassis Mount |
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
12 Weeks
Quantity
Web Price
1
$108.66
4
$107.08
10
$106.04
25
$105.02
40+
$103.49
Product Variant Information section
Available Packaging
Package Qty:
20 per Tray
Package Style:
Module
Mounting Method:
Chassis Mount