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Manufacturer Part #

NXH008T120M3F2PTHG

4 N-Channel 1200 V 129 A 371 W 11.5 mOhm Silicon Carbide MOSFET Module - PIM-29

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Date Code:
Product Specification Section
onsemi NXH008T120M3F2PTHG - Technical Attributes
Attributes Table
Type: Power Module
Technology: SiC (Silicon Carbide) Schottky
Gate-Source Voltage-Max [Vgss]: 1200V
Drain Current: 128A
Operating Temp Range: -40°C to +150°C
Package Style:  Module
Mounting Method: Chassis Mount
Pricing Section
Global Stock:
0
USA:
0
20
Factory Stock:Factory Stock:
0
Factory Lead Time:
12 Weeks
Minimum Order:
20
Multiple Of:
20
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$2,120.80
USD
Quantity
Web Price
1
$108.66
4
$107.08
10
$106.04
25
$105.02
40+
$103.49