text.skipToContent text.skipToNavigation

Free shipping within the continental US over $50. Conditions apply

  1. home
  2. Semiconductors
  3. Discretes
  4. Transistors
  5. Silicon Carbide Power Modules (SiC Power Modules)
  6. NXH006P120M3F2PTHG

onsemi | NXH006P120M3F2PTHG

Manufacturer Part #

NXH006P120M3F2PTHG

power module containing 6 m /1200 V SiC MOSFET halfbridge and a thermistor

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2429
Product Specification Section
onsemi NXH006P120M3F2PTHG - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Drain-to-Source Voltage [Vdss]: 1200V
Drain Current: 191A
Operating Temp Range: -40°C to +175°C
Mounting Method: Chassis Mount
Pricing Section
Global Stock:
20
Germany (Online Only):
20
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
12 Weeks
Minimum Order:
20
Multiple Of:
20
Total
$2,538.60
USD
Quantity
Web Price
20+
$126.93
Product Variant Information section