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Manufacturer Part #

NVH4L040N120SC1

Single N-Channel 1200 V 58 A 319 W Surface Mount SiC Power Mosfet - TO-247-4L

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
onsemi NVH4L040N120SC1 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 1200V
Drain Current: 58A
Input Capacitance: 1762pF
Power Dissipation: 319W
Operating Temp Range: -55°C to +175°C
Package Style:  TO-247-4L
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
17 Weeks
Minimum Order:
450
Multiple Of:
30
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$6,399.00
USD
Quantity
Web Price
30
$14.53
60
$14.45
90
$14.40
150
$14.34
300+
$14.22
Product Variant Information section