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Manufacturer Part #

IXTA96P085T-TRL

IXTA Series 85 V 13 mOhm 298 W SMT N-Channel Enhancement Mode Mosfet - TO-263AA

ECAD Model:
Mfr. Name: IXYS
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
IXYS IXTA96P085T-TRL - Technical Attributes
Attributes Table
Fet Type: P-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 85V
Drain-Source On Resistance-Max: 13mΩ
Rated Power Dissipation: 298W
Qg Gate Charge: 180nC
Gate-Source Voltage-Max [Vgss]: 15V
Drain Current: 96A
Turn-on Delay Time: 23ns
Turn-off Delay Time: 45ns
Rise Time: 34ns
Fall Time: 22ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4V
Input Capacitance: 13.1nF
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
Germany (Online Only):
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
44 Weeks
Minimum Order:
800
Multiple Of:
800
Total
$2,560.00
USD
Quantity
Web Price
800+
$3.20
Product Variant Information section