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Manufacturer Part #

IXFK100N65X2

N-Channel 650 V 100 A 30 mOhm Thru-Hole X2-Class HiPerFET Power Mosfet - TO-264

ECAD Model:
Mfr. Name: IXYS
Standard Pkg:
Date Code:
Product Specification Section
IXYS IXFK100N65X2 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 650V
Drain-Source On Resistance-Max: 30mΩ
Rated Power Dissipation: 1040W
Qg Gate Charge: 183nC
Gate-Source Voltage-Max [Vgss]: 30V
Drain Current: 100A
Turn-on Delay Time: 37ns
Turn-off Delay Time: 90ns
Rise Time: 26ns
Fall Time: 13ns
Operating Temp Range: -55°C to +150°C
Input Capacitance: 11300pF
Package Style:  TO-264AA
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
Germany (Online Only):
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
32 Weeks
Minimum Order:
1
Multiple Of:
1
Total
$12.72
USD
Quantity
Web Price
1
$12.72
5
$12.56
25
$12.40
75
$12.29
200+
$12.11