Manufacturer Part #
IAUC60N04S6N031HATMA1
Dual N-Channel 40 V 60 A 3.1 mOhm OptiMOS Power MOSFET - PG-TDSON-8-56
Product Specification Section
Infineon IAUC60N04S6N031HATMA1 - Product Specification
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ECCN:
EAR99
PCN Information:
N/A
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Date
Part Status:
Active
Active
Infineon IAUC60N04S6N031HATMA1 - Technical Attributes
Attributes Table
Fet Type: | N-Ch |
No of Channels: | 2 |
Drain-to-Source Voltage [Vdss]: | 40V |
Drain-Source On Resistance-Max: | 3.1mΩ |
Rated Power Dissipation: | 75W |
Qg Gate Charge: | 23nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 60A |
Turn-on Delay Time: | 5ns |
Turn-off Delay Time: | 10ns |
Rise Time: | 2ns |
Fall Time: | 5ns |
Operating Temp Range: | -55°C to +175°C |
Gate Source Threshold: | 2.6V |
Technology: | OptiMOS |
Input Capacitance: | 1479pF |
Package Style: | PG-TDSON-8-56 |
Mounting Method: | Surface Mount |
Pricing Section
Global Stock:
0
Germany (Online Only):
0
Factory Lead Time:
18 Weeks
Quantity
Web Price
5,000+
$0.655
Product Variant Information section
Available Packaging
Package Qty:
5000 per Reel
Package Style:
PG-TDSON-8-56
Mounting Method:
Surface Mount