Expansion of SiC MOSFET family gives designers choice of package styles

onsemi

onsemi SiC MOSFETs offer low on-resistance and low switching losses

onsemi supplies a growing range of silicon carbide (SiC) MOSFETs which give power-system designers a wide choice of package, footprint and voltage-rating options.


The expansion of the onsemi family comes in response to demand for devices based on SiC technology, which offers a combination of lower switching losses and faster switching speeds than traditional silicon power switches. These attributes have made SiC MOSFETs popular in applications which require high power-conversion efficiency, high power density or both.


onsemi, which recently announced the expansion of its SiC production facilities in Czechia and in New Hampshire, US, is supplying the industrial market with SiC MOSFETs that feature voltage ratings up to 1,700 V.

Part number

Voltage rating

On-resistance

Package style

NTH4L014N120M3P

1,200 V

14 mΩ

TO247-4L

NTH4L020N090SC1

900 V

20 mΩ

TO247-4L

NVH4L060N065SC1

650 V

44 mΩ

TO247-4L

NTH4L028N170M1

1,700 V

28 mΩ

TO247-4L

NTMT045N065SC1

650 V

33 mΩ

Power88

NVBG025N065SC1

650 V

19 mΩ

D2PAK-7L

Features

  • Low common-source inductance
  • Gate-drive voltage range: 18 V to 20 V
  • Low switching losses
  • 100% avalanche tested

Applications

  • Solar inverters
  • Uninterruptible power supplies
  • Solid-state transformers
  • Medium-voltage grid equipment
  • Energy storage systems
  • Hydrogen electrolyzers
  • Fuel cells
onsemi — SiC MOSFETs

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