onsemi — EliteSiC Power Products and Solutions

The onsemi EliteSiC product portfolio is a range of silicon carbide (SiC) power devices and modules which offer proven quality and robust designs, and which benefit from the fully integrated manufacturing capability that onsemi has established. The EliteSiC family consists of SiC MOSFETs, SiC diodes, power modules made of SiC MOSFETs and SiC diodes, and hybrid SiC/silicon modules.  

The latest devices to join the EliteSiC family are 1,700 V-rated for energy infrastructure and industrial drives. The 1,700 V EliteSiC MOSFET and two 1,700 V avalanche-rated EliteSiC Schottky diodes feature a high breakdown voltage to comply with the requirements of high-power industrial applications.  

The use of SiC technology enables both 1,700 V avalanche-rated EliteSiC Schottky diodes to maintain high-voltage operation at high temperature with high efficiency. The SiC diodes’ key features, such as zero reverse-recovery charge, low forward voltage and temperature-independent current stability, result in superior switching operation with lower power losses, and support effortless paralleling of devices. 

The NDSH25170A diode, which has a 400 mJ avalanche energy rating, supports a maximum rectified forward current of 35 A at a case temperature of up to 135°C. The NDSH25170A’s forward voltage is 2.32 V at a forward current of 25 A and a junction temperature of 175°C. It is supplied in a through-hole TO-247-2LD package. The other 1,700 V SiC diode, the NDSH10170A has a current rating of 10 A.  

The extension of the EliteSiC family also sees the introduction of a 1,700 V MOSFET. The NTBG028N170M1 is the first in the onsemi M1 family of 1,700V planar SiC MOSFETs, which are optimized for fast-switching applications.  

Planar technology works reliably with a negative gate voltage and turn-off spikes on the gate. The M1 family devices provide the best performance when driven at 20 V, but also work well with an 18 V gate-drive voltage.