Infineon — IMT65RxxxM1H SiC MOSFETs

Infineon has released new 650 V CoolSiC™ silicon carbide (SiC) MOSFETs, supplied in through-hole leadless (TOLL) packaging, which can reduce the losses and improve the reliability of power conversion circuits. The MOSFETs are an ideal choice for topologies with repetitive hard commutation, such as totem-pole power factor correction.  

The new IMT65RxxxM1H family devices are supplied in a JEDEC-qualified TOLL package which has low parasitic inductance, allowing for higher switching frequency and reduced switching losses.  The TOLL package, which is compatible with automated assembly equipment, also offers lower thermal impedance than the familiar D2PAK package. Thermal performance is enhanced by the inclusion of innovative .XT interconnect technology.  

The IMT65RxxxM1H MOSFETs are notable for their high reliability even in harsh operating conditions. A gate threshold voltage higher than 4 V secures the device against parasitic turn-on. The MOSFET also features a robust body diode, and strong gate oxide which helps produce extremely low failures in time (FIT) rates. 

Infineon has worked to make these CoolSiC MOSFETs easy to use. While a cut-off voltage of 0 V is generally recommended to simplify the driving circuit, the new products support a broad gate-source voltage spread, from a turn-off voltage down to -5 V up to a maximum turn-on voltage of 23 V. This makes the IMT65RxxxM1H products compatible with other SiC MOSFETs and with standard MOSFET gate drivers.