STMicroelectronics — STGD6M65DF2 IGBT

The STGD6M65DF2 IGBT from STMicroelectronics features an advanced proprietary trench-gate field-stop structure which provides low-loss operation for higher system efficiency. This is supported by low thermal resistance.  

The advanced trench-gate field-stop structure also ensures good short-circuit functionality. The STGD6M65DF2 is capable of withstanding short-circuit operation for a minimum of 6 μs. 

This IGBT features a soft, ultra-fast recovery antiparallel diode to protect the STGD6M65DF2. Additionally, the positive collector-emitter saturation voltage-to-temperature coefficient and tight parameter distribution enable safer operation when paralleling multiple STGD6M65DF2.  

The continuous collector current, or forward current, is up to 12 A at 25°C. This is reduced to 6 A at 100°C and increases to 24 A during pulsed operation. The rated maximum total power dissipation of the device is 88 W at 25°C. 

The STGD6M65DF2 is supplied in a 6.40 mm x 9.35 mm x 2.20 mm DPAK package.