Vishay — SiHK045N60E Power MOSFET

The fourth generation of Vishay E series MOSFET technology provides an improved figure-of-merit, for more efficient performance in power-conversion applications.

The 650 V SiHK045N60E power MOSFET takes advantage of the E series technology to produce excellent switching and conduction characteristics. The device offers a low figure-of-merit for the product of on-resistance and gate charge. On-resistance at a gate-source voltage of 10 V is 43 mΩ. Maximum gate charge is 98 nC.

Energy-related effective output capacitance is another attractive feature of the SiHK045N60E, at just 117 pF.