Littelfuse — LSIC1MO170T0750 MOSFET

Littelfuse has extended its series of 1,700V Silicon Carbide (SiC) MOSFETs with the new LSIC1MO170T0750 in a TO-263-7L package which offers lower on-resistance and better switching performance than earlier products.

The LSIC1MO170T0750 MOSFET’s seven-lead package features a separate source pin which substantially reduces the parasitic source inductance path to the driver: this gives faster switching and reduces switching losses. The LSIC1MO170T0750 also features on-resistance of just 750mΩ, 25% lower than that of Littelfuse’s 1,700V-rated LSIC1MO170E1000 SiC MOSFET, which is supplied in a TO-247-3L package. By using the LSIC1MO170T0750, power-system designers can achieve even higher efficiency in high-frequency switching power-conversion applications.

When compared to 1,700V-rated silicon IGBTs, the Littelfuse SiC MOSFETs offer higher efficiency and higher power density, require less cooling, and potentially reduce total power-system costs.

The properties of the SiC material also make these Littelfuse MOSFETs superior to silicon MOSFETs in blocking voltage, specific on-resistance, and junction capacitance.