Infineon — CFD7 Family of CoolMOS™ Superjunction MOSFETs
Infineon

Infineon CFD7 Family of CoolMOS™ Superjunction MOSFETs

New 650V MOSFETs offer efficient operation in soft-switching topologies

Infineon has extended its CFD7 family of CoolMOS™ superjunction MOSFETs with new 650V-rated devices which offer high efficiency and power density in soft-switching industrial power supplies. The new parts offer an extra 50V of breakdown-voltage headroom over the existing range of 600V CFD7 MOSFETs. 

 

The 650V CFD7 MOSFETs are notable for the fast integrated body diode, low reverse-recovery charge for improved switching performance, and excellent thermal behavior. The robust architecture makes the MOSFETs suitable for use in hard-commutation applications. The extra safety margin over 600V-rated MOSFETs is also helpful in designs which operate on a high bus voltage.

 

The CFD7 devices offer the best on-resistance ratings of any 650V MOSFET in a TO-247, TO-220, or D2PAK package. These ratings vary little over temperature.

 

The high light- and full-load efficiency and low power losses provided by the CFD7 MOSFETs in soft-switching topologies enable system designers to increase power density while maintaining high reliability in industrial applications which have a long operating lifetime.

Part Number

Package

Maximum On-resistance (mΩ)

Maximum Drain Current (A)

Gate Charge (nC)

IPW65R029CFD7

TO-247

29

69

145

IPZA65R029CFD7

Four-pin TO-247

29

69

145

IPP65R041CFD7

TO-220

41

50

102

IPB65R041CFD7

D2PAK (TO-263)

41

50

102

IPW65R041CFD7

TO-247

41

50

102

IPP65R060CFD7

TO-220

60

36

68

IPW65R060CFD7

TO-247

60

36

68

IPP65R090CFD7

TO-220

90

25

53

IPB65R090CFD7

D2PAK (TO-263)

90

25

53

IPW65R090CFD7

TO-247

90

25

53

IPB65R110CFD7

D2PAK (TO-263)

110

22

41

IPP65R110CFD7

TO-220

110

22

41

IPW65R110CFD7

TO-247

110

22

41

IPW65R125CFD7

TO-247

125

19

36

IPB65R125CFD7

D2PAK (TO-263)

125

19

36

IPB65R155CFD7

D2PAK (TO-263)

155

15

28

IPW65R155CFD7

TO-247

155

15

28

IPP65R155CFD7

TO-220

155

15

28

IPP65R190CFD7

TO-220

190

12

23

Features

  • 4V gate threshold voltage
  • 0V diode forward voltage
  • 70V/ns maximum reverse diode dv/dt
  • Thermal resistance: 0.98°C/W junction-to-case
  • Junction-temperature range: -55°C to 150°C

Applications

  • Telecoms equipment
  • Servers
  • Solar power generation
  • Off-board electric vehicle charging

Share This

Subscribe to our newsletters

Subscribe to Future Electronics

Get access to the latest product information, technical analysis, design notes and more

Choose your region

Resources

Infineon: Expanding CoolMOS CFD7 to 650V

Related Articles