Vishay — SIZF5302DT and SIZF5300DT Dual N-Channel MOSFETs

Vishay has introduced a fifth generation of its TrenchFET® MOSFET technology which enables power-system designers to build smaller, more efficient dc-dc converters.

The TrenchFET Gen V technology has been implemented in new low-voltage MOSFETs. The SIZF5302DT and SIZF5300DT are 30 V dual N-channel MOSFETs. The devices’ combination of high- and low-side MOSFETs are suitable for operation in a 50% duty cycle. Thanks to low on-resistance and low gate charge, the MOSFETs enable designers to achieve high efficiency in high-frequency synchronous buck converters and in half-bridge circuits.

The MOSFETs are housed in a 3 mm x 3 mm PowerPAIR® package. Based on flip-chip technology, this package offers excellent thermal performance.

The SIZF5302DT features maximum on-resistance of 3.2 mΩ at 10 V, and gate charge of 6.7 nC. It can handle a maximum drain current of 100 A. The SIZF5300DT’s maximum on-resistance is 2.4 mΩ at 10 V, and gate charge is 9.5 nC. Maximum current is 125 A.