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The StrongIRFET™ 2 family of N-channel power
MOSFETs from Infineon offers higher efficiency in switching power-conversion
applications than the first generation of StrongIRFET devices, while matching
the attractive price/performance ratio and broad availability.
The new StrongIRFET 2 technology offers up to
40% lower on-resistance and up to 60% lower gate charge. Increased current
ratings allow for higher current-carrying capability, eliminating the need to
parallel multiple devices. This results in lower bill-of-materials cost and a
smaller board footprint.
The StrongIRFET 2 MOSFETs are suitable for
both low and high switching frequencies, and with breakdown-voltage options of
40 V, 60 V, 80 V and 100 V, they fit a broad range of applications.
The new MOSFETs are available now in an
industry-standard TO-220 through-hole package. The standard pin-out allows for
drop-in replacement of other MOSFETs. Products in the family are also available
in TO-220 FullPAK, D2PAK, D2PAK 7-pin, DPAK and TOLL package options.
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