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Référence fabricant

SIR-563ST3F

SIR Series 940 nm 21 mW/sr 100 mA Through Hole Infrared Light Emitting Diode

Modèle ECAD:
Nom du fabricant: ROHM
Emballage standard:
Product Variant Information section
Code de date: 2350
Product Specification Section
ROHM SIR-563ST3F - Caractéristiques techniques
Attributes Table
Wavelength: 940nm
Angle of Half Intensity: ±15°
Intensity: 21mW/sr
Forward (Drive) Current: 100mA
Forward Voltage: 1.34V
Méthode de montage : Through Hole
Fonctionnalités et applications

The SIR-563ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940 nm peak wavelength suitable for silicon detectors. It has a wide radiation angle and is ideal for compact optical control equipment.

Features:

  • High efficiency, high output PO=11.0 mW (IF=50 mA)
  • Wide radiation angle θ1/2=15deg
  • Emission spectrum well suited to silicon detectors (λP=940 nm)
  • Good current-optical output linearity
  • Long life, high reliability

Applications:

  • Optical control equipment
  • Light source for remote control devices

View the complete family of SIR-5 Optical Sensors & Switches

Pricing Section
Stock global :
1 000
États-Unis:
1 000
Sur commande :
0
Stock d'usine :Stock d'usine :
0
Délai d'usine :
15 Semaines
Commande minimale :
1
Multiples de :
1
Total 
0,31 $
USD
Quantité
Prix Internet
1
$0.31
125
$0.30
300
$0.29
750
$0.28
2 000+
$0.26
Product Variant Information section