Manufacturer Part #
SIR-563ST3F
SIR Series 940 nm 21 mW/sr 100 mA Through Hole Infrared Light Emitting Diode
Product Specification Section
ROHM SIR-563ST3F - Product Specification
Shipping Information:
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ECCN:
EAR99
PCN Information:
File
Date
Material Supplier Change
09/16/2022 Details and Download
Part Status:
Active
Active
ROHM SIR-563ST3F - Technical Attributes
Attributes Table
Wavelength: | 940nm |
Angle of Half Intensity: | ±15° |
Intensity: | 21mW/sr |
Forward (Drive) Current: | 100mA |
Forward Voltage: | 1.34V |
Mounting Method: | Through Hole |
Features & Applications
The SIR-563ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940 nm peak wavelength suitable for silicon detectors. It has a wide radiation angle and is ideal for compact optical control equipment.
Features:
- High efficiency, high output PO=11.0 mW (IF=50 mA)
- Wide radiation angle θ1/2=15deg
- Emission spectrum well suited to silicon detectors (λP=940 nm)
- Good current-optical output linearity
- Long life, high reliability
Applications:
- Optical control equipment
- Light source for remote control devices
Pricing Section
Global Stock:
1,000
USA:
1,000
On Order:
0
Factory Lead Time:
15 Weeks
Quantity
Web Price
1
$0.31
125
$0.30
300
$0.29
750
$0.28
2,000+
$0.26
Product Variant Information section
Available Packaging
Package Qty:
1000 per Bag
Mounting Method:
Through Hole