text.skipToContent text.skipToNavigation

Manufacturer Part #

IAUC60N04S6N031HATMA1

Dual N-Channel 40 V 60 A 3.1 mOhm OptiMOS Power MOSFET - PG-TDSON-8-56

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IAUC60N04S6N031HATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 2
Drain-to-Source Voltage [Vdss]: 40V
Drain-Source On Resistance-Max: 3.1mΩ
Rated Power Dissipation: 75W
Qg Gate Charge: 23nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 60A
Turn-on Delay Time: 5ns
Turn-off Delay Time: 10ns
Rise Time: 2ns
Fall Time: 5ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 2.6V
Technology: OptiMOS
Input Capacitance: 1479pF
Package Style:  PG-TDSON-8-56
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
Germany (Online Only):
0
5,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
18 Weeks
Minimum Order:
5000
Multiple Of:
5000
Total
$3,275.00
USD
Quantity
Web Price
5,000+
$0.655
Product Variant Information section