STMicroelectronics Silicon Carbide (SiC) MOSFETs
The latest breakthrough in high-voltage switching and rectification
STMicroelectronics Silicon Carbide (SiC) MOSFETs include 650 / 1200 V SiC MOSFETs featuring the industry’s highest junction temperature rating of 200°C for more efficient and simplified designs. The portfolio also includes SiC diodes ranging from 600 to 1200 V, which feature negligible switching losses and 15% lower forward voltage (VF) than standard silicon diodes.
Features of SiC MOSFETs - Reduced cooling requirements and heatsink thanks to the industry’s highest operating junction temperature (Tj max) of 200 °C and low on-state resistance over the entire temperature range
- Extremely low power losses
- Increase of on-resistance versus temperature
- Very easy to drive (resulting in smaller component count)
- High operating frequency for reduced switching losses and smaller/lighter systems
- Fast and robust intrinsic body diode
| Features of SiC Diodes - Increased efficiency with very low forward conduction losses
- Low switching losses for reduced size and cost of the power converter
- Soft switching behavior (low EMC impact), simplifying certification and speeding time-to market
- High forward surge capability for increased robustness and reliability
- High power integration (dual diodes) for reduced PCB form factor
- High-temperature capability with Tj max = 175 °C
- AEC-Q101-qualified and PPAP-capable automotive-grade SiC diodes
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