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Manufacturer Part #

NTBG022N120M3S

N-Channel 1200 V 30 mOhm 234 W Surface Mount SiC MOSFET - D2PAK-7

Product Specification Section
onsemi NTBG022N120M3S - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 1200V
Drain Current: 58A
Input Capacitance: 3200pF
Power Dissipation: 234W
Operating Temp Range: -55°C to +175°C
Package Style:  TO-263-7 (D2PAK7)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
6,400
Factory Stock:Factory Stock:
0
Factory Lead Time:
17 Weeks
Minimum Order:
800
Multiple Of:
800
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$7,240.00
USD
Quantity
Web Price
800+
$9.05