Manufacturer Part #
MR4A16BCYS35
MR4A16B Series 16 Mb (1 M x 16) 3.6 V 35 ns Asynchronous MRAM Memory - TSOP2-54
Everspin Technologies MR4A16BCYS35 - Product Specification
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Everspin is adding SilTerra as a 2nd qualified CMOS wafer processing site for 16Mb x8/16 and 8Mb x16 TSOP44 and TSOP54 products. No change to MRAM wafer processing. Reason For Change: In order to increase capacity and improve supply flexibility, Everspin is adding SilTerra as a CMOS wafer processing site for 16Mb x8/16 and 8Mb x16 TSOP44 and TSOP54 products.
Part Status:
Everspin Technologies MR4A16BCYS35 - Technical Attributes
Memory Density: | 16Mb |
Interface Type: | Parallel |
Memory Organization: | 1 M x 16 |
Supply Voltage-Nom: | 3V to 3.6V |
Access Time-Max: | 35ns |
Temperature Range: | -40°C to +85°C |
Package Style: | TSOP II-54 |
Mounting Method: | Surface Mount |
Features & Applications
The MR4A16BCYS35 is a magneto resistive random access memory (MRAM) organized as 1,048,576 words of 16 bits.
This device offers SRAM compatible 35 ns read/write timing with unlimited endurance. It is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly.
Features:
- +3.3 Volt power supply
- Fast 35 ns read/write cycle
- SRAM compatible timing
- Unlimited read & write endurance
- Data always non-volatile for >20 years at temperature
- RoHS-compliant small footprint BGA and TSOP2 package
- AEC-Q100 Grade 1 option in TSOP2 package
Benefits:
- One memory replaces FLASH, SRAM, EEPROM and BBSRAM in systems for simpler, more efficient designs
- Improves reliability by replacing battery-backed SRAM
View the available MR4A16B series of MRAMs
Available Packaging
Package Qty:
108 per Tray
Package Style:
TSOP II-54
Mounting Method:
Surface Mount