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Manufacturer Part #

PSMN2R2-40YSBX

N-Channel 40 V 180 A 166 W 2.2 mOhm SMT Standard Level MOSFET - Power-SO8

ECAD Model:
Mfr. Name: Nexperia
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Nexperia PSMN2R2-40YSBX - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 40V
Drain-Source On Resistance-Max: 2.2mΩ
Rated Power Dissipation: 166W
Qg Gate Charge: 69nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 180A
Turn-on Delay Time: 13ns
Turn-off Delay Time: 29ns
Rise Time: 9ns
Fall Time: 12ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 3.6V
Technology: Si
Input Capacitance: 5173F
Package Style:  POWERSO-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
Germany (Online Only):
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
1500
Multiple Of:
1500
Total
$675.00
USD
Quantity
Web Price
1,500
$0.45
3,000
$0.44
4,500
$0.435
6,000
$0.43
7,500+
$0.415
Product Variant Information section