New 3 kW LLC dc-dc converter board accelerates evaluation of onsemi SiC power components.
Compact SoniC platform demonstrates fast-switching capability of SiC MOSFETs from onsemi.
- 250 kHz switching for high power density
- 97.4% peak efficiency
- Compact LLC DC-DC stage: 380 V DC input, 49 V input
Fast-switching gallium nitride (GaN) and silicon carbide (SiC) power components enable power-system designers to reduce the size of the magnetics in ac-dc and dc-dc converters, and to realize designs which achieve high power density.
But in a 3 kW DC-DC converter, how do design engineers take advantage of the faster switching capabilities of SiC MOSFETs?
Now Future Electronics offers a convenient and quick way to find out, with the launch of the SoniC power system development board.
An adaptable platform for the development of a 3 kW DC-DC converter, the SoniC board features a modular plug-in card which enables the designer to evaluate the performance of SiC MOSFETs with different Rds(on) values, from onsemi. The secondary-side output stage can also be reconfigured.
SoniC is backed by full technical documentation and support from Future Electronics’ dedicated power electronics specialists.
What is SoniC?
A resonant LLC dc-dc converter which can support loads up to 3 kW at an output voltage of 49 V DC.
How is the SoniC board’s dc-dc conversion controlled?
The SoniC board uses components from onsemi to implement a fast-switching LLC DC-DC converter. The NCP4390, which performs secondary-side LLC control, offers best-in-class efficiency for isolated dc-dc converters. The device is an advanced pulse frequency modulation (PFM) controller with synchronous rectification.
Its current-mode control scheme provides a better control-to-output transfer function of the power stage, simplifying feedback loop design while allowing true input-power limiting.
What are the switching arrangements?
Efficient fast-switching is enabled by the use of wide-bandgap components on the primary-side full-bridge. A modular plug-in card features 650 V SiC MOSFETs from onsemi.
4 x NTH4L045N065SC1 (45-mΩ, 650-V SiC MOSFET) from onsemi are used for the primary-side of the LLC dc-dc converter in full-bridge configuration.
8 x FDMT80080DC (1.35-mΩ, 80-V Si MOSFET) from onsemi are used for the secondary-side of the LLC dc-dc converter in full-bridge configuration.
An array of onsemi 150 V silicon MOSFETs in a half-bridge configuration produces a 48 V output on the secondary-side.
