Utilizing Nano Cap™, EcoGaN™, 650V 70mΩ 2MHz, and GaN
This is the ROHM Semiconductor product that guarantees long time support in industrial markets. The BM3G007MUV-LB provides an optimum solution for all electronics systems that requires high power density and efficiency.
By integrating the 650V enhancement GaN HEMT and silicon driver to ROHM’s original package, parasitic inductance caused by a PCB and wire bonding is reduced significantly compared to traditional discrete solutions. Owing to this, a high switching slew rate up to 150V/ns can be achieved. On the other hand, adjustable gate drive strength contributes to low EMI, and various protections and other additional functions provide optimized cost, PCB size.
This ROHM IC is designed to adapt to major existing controllers, so that it also can be used to replace the traditional discrete power switches, such as super junction MOSFET.
View the Datasheet
Features
- Nano Cap™ Integrated Output Selectable 5V LDO
- Long Time Support Product for Industrial Applications
- Wide Operating Range for VDD Pin Voltage
- Wide Operating Range for IN Pin Voltage
- Low VDD Quiescent and Operating Current
- Low Propagation Delay
- High dv/dt Immunity
- Adjustable Gate Drive Strength
- Power Good Signal Output
- VDD UVLO Protection
- Thermal Shutdown Protection
Applications
- Industrial Equipment
- Power Supplies with High Power Density
- High Efficiency Demand
- Bridge Topology such as Totem-pole PFC
- LLC Power Supply
- Adaptors
