150 V, 7 mOhm GaN FET in a 2.2 mm x 3.2 mm x 0.774 mm Land Grid Array (LGA) package
The GAN7R0-150LBE is a general purpose 150 V, 7 mΩ Gallium Nitride (GaN) FET in a Land Grid Array (LGA) package. It is a normally-off e-mode device offering superior performance.
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Features
- Enhancement mode – normally-off power switch
- Ultra high frequency switching capability
- No body diode
- Low gate charge, low output charge
- Qualified for standard applications
- ESD protection
- RoHS, Pb-free, REACH-compliant
- High efficiency and high power density
- Land Grid Array (LGA) package 2.2 mm x 3.2 mm x 0.774 mm
Applications
- High power density and high efficiency power conversion
- AC-to-DC converters, (secondary stage)
- High frequency DC-to-DC converters in 48 V systems
- 400 V to 48 V LLC converters, secondary (rectification) side
- Fast battery charging, mobile phone, laptop, tablet and USB type-C chargers
- Datacom and telecom (AC-to-DC and DC-to-DC) converters
- Motor drives
- LiDAR (non-automotive)
- Class D audio amplifiers
