Efficient and effective high-power FETs
The very high electron mobility of GaN enables the creation of devices with low on-resistance and exceptionally high switching frequency capability. These advantages are vital in next-generation power systems, such as electric vehicles (EV) and renewable energy applications.
Nexperia cascode GaN FETs are the enabler in these applications offering high power density, high performance, and high switching frequency. This unique solution facilitates the ease of driving the devices using well-known Si MOSFET gate drivers. Additionally, with unmatched high junction temperature (Tj [max] 175 °C), ease of design freedom and improved reliability of power systems unlike other solutions on the market.
